Effect of iron substitution on electronic conductivity of bismuth sesquioxide glasses

Several glassy oxide semiconductors exhibit large electron mobilities; however, these oxides may not be considered environmentally friendly because of their toxicity. Herein, we report on the electrical conduction iron oxide-containing bismuth sesquioxide borate glasses that are toxic and show ohmic transport in temperature range 100–400 °C. The dominant carrier is electron, which revealed by signs Hall Seebeck coefficients, without sign anomalies. mobility ∼0.1 cm2/(V s), density ∼6 × 1015 cm−3 at 400 coefficient approximately −500 μV/K 388 carriers might generated charge transfer between Fe2+ Fe3+ substituted glass, they thermally activated hopping-type electronic conduction. glass can used as a thermistor for